Samsung 4Gb DDR3 SDRAM (x16, DDR3-1600) — high-density main memory for embedded and module applications.
Product Overview
The K4B4G1646E-BYK0 is a Samsung 4 Gbit DDR3 SDRAM organized as 256M x 16 across 8 banks, supporting DDR3-1600 data rates (1600 Mbps) at 1.5 V. It is a standard high-density memory device used as main system memory in embedded computers, SoC platforms and memory modules where a x16 DDR3 interface is required.
Key Features
- – 4 Gbit density, organized 256M x 16 (8 banks)
- – DDR3-1600 data rate (1600 Mbps)
- – 1.5 V supply
- – x16 organization for compact designs
- – 96-ball FBGA package
- – Widely used, mature DDR3 ecosystem
- – High-density main-memory solution
Technical Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samsung |
| Density | 4 Gbit |
| Organization | 256M x 16 (8 banks) |
| Memory Type | DDR3 SDRAM |
| Data Rate | DDR3-1600 (1600 Mbps) |
| Clock Frequency | 800 MHz |
| Supply Voltage | 1.5 V |
| Interface | DDR3 (x16) |
| Package | 96-ball FBGA |
| Operating Temperature | 0°C to 95°C (verify with manufacturer datasheet) |
| RoHS | Compliant |
Applications
Embedded computing, SoC / FPGA main memory, Memory modules, Industrial PCs, Networking equipment, Consumer electronics.
Why Choose Newfly Electronics
Newfly Electronics supplies the K4B4G1646E-BYK0 from ISO9001-verified channels with lot traceability. We offer MOQ flexibility for prototypes and volume, cross-reference to equivalent DDR3 devices during allocation, and full-board BOM sourcing. RoHS / REACH documentation is provided on request.
FAQ
Q: What does the -BY speed grade mean?
A: The -BY suffix denotes DDR3-1600 operation (1600 Mbps data rate).
Q: Is this x16 or x8?
A: The K4B4G1646E is x16 (256M x 16).
Q: Do you stock other DDR3 densities?
A: Yes — share your BOM and we will cross-reference the required density and speed grade.
